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Расчет апериодического каскада усилительного устройства

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?an/ao aia?eiaee/aneiai eaneaaea oneeeoaeueiiai ono?ienoaa

Iineianeee Aaeaoeeiiiue einoeooo i?eaaonoaoao oaay!

Punched Holes!

I. Auai? ?aai/ae oi/ee o?aicenoi?a e ?an/ao yeaiaioia, iaania/eaathueo
oaiia?aoo?ioth ianoaaeeueiinoue eieeaeoi?iiai oiea. RC – oeeueo? a oeaie
ieoaiey.

?ann/eouaaoue aoaeai iaeineaiaeueiue aia?eiaee/aneee oneeeoaeue n RC –
oeeueo?ii a oeaie ieoaiey. (?en1)

?en 1.

A ea/anoaa aeoeaiiai i?eai?a caaeai e?aiiaaaue o?aicenoi? EO316 a
aanei?ioniii eniieiaiee.

Ec ni?aai/ieea iaoiaeei ia?aiao?u o?aicenoi?a:

Ia?aoiue oie eieeaeoi?a i?e Uea=10 A Iei = 0,5 ieA

Bipolar transistors Type 6 …Alias KT316

Value Tolerance(%)

0:Forward beta 45
10

1:Reverse beta
1 20

2:Temp coeff of BETAF(PPM) 2500
20

3:Saturation current
3.632513E-16 60

4:Energy gap(.6 TO 1.3) 1.11
60

5:CJC0
3.916969E-12 60

6:CJE0
3.642178E-11 60

9:Early voltage
250 30

10:TAU forward 1.591549E-10
40

11:TAU reverse 1.827498E-08
50

12:MJC
.33 40

13:VJC
.7499999 30

14:MJE
.33 30

15:VJE
.7499999 30

16:CSUB
2E-12 10

17:Minimum junction resistance .01
0

Auaa?ai ?aai/oth oi/eo o?aicenoi?a.

Caaeaaeei:

Naeaeaai i?iaa?eo, /oiau iiuiinoue ?annaaiay ia eieeaeoi?a o?aicenoi?a:

:

?ann/eoaai iaeioi?ua Y-ia?aiao?u o?aicenoi?a

Aeeooa?aioeeaeueiia nii?ioeaeaiea yieoa?iiai ia?aoiaea:

Iinoiyiiay a?aiaie oeaie IN

– iauaiiia ?ani?aaeaeaiiia nii?ioeaeaiea aacu.

oaoiieiae/aneee eiyooeoeeaio (aeey aeaiiiai o?aicenoi?a = 4)

Iecei/anoioiay i?iaiaeeiinoue i?yiie ia?aaea/e

– I* aoiaeiay i?iaiaeeiinoue o?aicenoi?a

Oaia?ue ?ann/eoaai yeaiaiou noaiu. RC – oeeueo?a a oeaie ieoaiey
iicaieeo inouanoaeoue I* ei??aeoeeth. Yooaeoeaiinoue I* ei??aeoeee oai
auoa, /ai aieueoa nii?ioeaeaiea Ro. Iii aeieaeii auoue a ianeieueei ?ac
aieueoa /ai Re. Iau/ii oaaee/aiea Ro ia?aie/aii aeiionoeiui ia iai
iaaeaieai iinoiyiiiai iai?yaeaiey eioi?ia, a naith i/a?aaeue caaeneo io
Ae. I?eiai Ro=1.5Re=705 Ii

Oiaaea

Ec noaiaea?oiiai ?yaea nii?ioeaeaiee auae?aai Ry=0.3 eIi

Aaciaue aeaeeoaeue:

Oaeei ia?acii , aeey ?an/aoa iaiaoiaeeii ciaoue oie aeaeeoaey

oa?aeoa?ecoao oaeoth i?e/eio oaiia?aoo?iie ianoaaeeueiinoe eaneaaea,
eae oaieiaia niauaiea aoiaeiie oa?aeoa?enoeee

, yaeythuoyny oaeaea oaiia?aoo?iie ianoaaeeueiinoe eaneaaea

Oiaaea iieo/aai:

Ec noaiaea?oiiai ?yaea nii?ioeaeaiee auae?aai

eaneaaea

?ann/eoaai aieinoue a oeaie IN

Aeiionoei, /oi aeiey /anoioiuo eneaaeaiee, aiineiuo ia /anoioa fi
eiiaeainaoi?ii N? a E=30 ?ac iaiueoa, /ai eiiaeainaoi?ii Ny.Oiaaea ii
a?aoeeo ia ?enoiea 3.14 ec iiniaey [2] ii?aaeaeyai cia/aiey
eiyooeoeeaioia /anoioiuo eneaaeaiee Ii? e Iiy

Ii?=0.99

Iiy=0.7125

, aaea Fi – caaeaiiay ieaeiyy a?aie/iay /anoioa anaai oneeeoaey, n –
/enei ?acaeaeeoaeueiuo eiiaeainaoi?ia. Oiaaea:

A eoiaa iieo/aai:

Ec noaiaea?oiiai ?yaea nii?ioeaeaiee auae?aai

?ann/eoaai aieinoue ?acaeaeeoaeueiiai eiiaeainaoi?a

I?eiaiaiea ei??aeoeee iicaieyao eni?aaeoue ?acaeaeeoaeueiue eiiaeainaoi?
iaiueoae aieinoueth, /ai N?

Ec noaiaea?oiiai ?yaea nii?ioeaeaiee auae?aai

Aieinoue oeeueo?a

Ec noaiaea?oiiai ?yaea nii?ioeaeaiee auae?aai

Iiaeaee?iaaiea eaneaaea ia YAI.

Ia?aiao?u noaiu

No. Label Parameter No. Label Parameter

1 RI 200 21 C1
0.22E-9

2 R1 6.9K 22 CF
0.15E-9

3 R2 1.8K 23 C4
1E-6

4 R4 470 24 CN
1.5E-12

5 RN 510

6 R6 300

7 RB 50

8 RF 700

Ia?aiao?u enoi/ieea GEN

Programmable waveforms Type 0 …Alias GEN

Value

0:Zero level voltage 0

1:One level voltage 0

2:Time delay to leading edge .000001

3:Time delay to one level .000001

4:Time delay to falling edge .000005

5:Time delay to zero level .000005

6:Period of waveform (1/F) .001

A?aoeee A*O, O*O e AAC GEN

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